1 power mosfet irfz24, sihfz24 features ? dynamic dv/dt rating ? 175 c operating temperature ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 25 v, starting t j = 25 c, l = 403 h, r g = 25 ? , i as = 17 a (see fig. 12). c. i sd ? 17 a, di/dt ? 140 a/s, v dd ? v ds , t j ? 175 c. d. 1.6 mm from case. product summary v ds (v) 60 r ds(on) ( ? )v gs = 10 v 0.10 q g (max.) (nc) 25 q gs (nc) 5.8 q gd (nc) 11 configuration single n-channel mosfet g d s to-220ab g d s ordering information package to-220ab lead (pb)-free IRFZ24PBF sihfz24-e3 snpb irfz24 sihfz24 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 17 a t c = 100 c 12 pulsed drain current a i dm 68 linear derating factor 0.40 w/c single pulse avalanche energy b e as 100 mj maximum power dissipation t c = 25 c p d 60 w peak diode recovery dv/dt c dv/dt 4.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com document number: 91406 www.vishay.com s11-0521-rev. b, 21-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet irfz24, sihfz24 vishay siliconix features ? dynamic dv/dt rating ? 175 c operating temperature ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 25 v, starting t j = 25 c, l = 403 h, r g = 25 : , i as = 17 a (see fig. 12). c. i sd d 17 a, di/dt d 140 a/s, v dd d v ds , t j d 175 c. d. 1.6 mm from case. product summary v ds (v) 60 r ds(on) ( : )v gs = 10 v 0.10 q g (max.) (nc) 25 q gs (nc) 5.8 q gd (nc) 11 configuration single n-channel mosfet g d s to-220ab g d s ordering information package to-220ab lead (pb)-free IRFZ24PBF sihfz24-e3 snpb irfz24 sihfz24 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 17 a t c = 100 c 12 pulsed drain current a i dm 68 linear derating factor 0.40 w/c single pulse avalanche energy b e as 100 mj maximum power dissipation t c = 25 c p d 60 w peak diode recovery dv/dt c dv/dt 4.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
2 irfz24, sihfz24 notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -2.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 60 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - 0.061 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v - - 25 a v ds = 48 v, v gs = 0 v, t j = 150 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 10 a b - - 0.10 ? forward transconductance g fs v ds = 25 v, i d = 10 a 5.5 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 640 - pf output capacitance c oss - 360 - reverse transfer capacitance c rss -79- total gate charge q g v gs = 10 v i d = 17 a, v ds = 48 v, see fig. 6 and 13 b --25 nc gate-source charge q gs --5.8 gate-drain charge q gd -- 11 turn-on delay time t d(on) v dd = 30 v, i d = 17 a, r g = 18 ? , r d = 1.7 ? , see fig. 10 b -13- ns rise time t r -58- turn-off delay time t d(off) -25- fall time t f -42- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --17 a pulsed diode forward current a i sm --68 body diode voltage v sd t j = 25 c, i s = 17 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 17 a, di/dt = 100 a/ ? s - 88 180 ns body diode reverse recovery charge q rr - 0.29 0.64 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g www.kersemi.com www.vishay.com document number: 91406 2 s11-0521-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width d 300 s; duty cycle d 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -2.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 60 - - v v ds temperature coefficient ' v ds /t j reference to 25 c, i d = 1 ma - 0.061 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v - - 25 a v ds = 48 v, v gs = 0 v, t j = 150 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 10 a b - - 0.10 : forward transconductance g fs v ds = 25 v, i d = 10 a 5.5 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 640 - pf output capacitance c oss - 360 - reverse transfer capacitance c rss -79- total gate charge q g v gs = 10 v i d = 17 a, v ds = 48 v, see fig. 6 and 13 b --25 nc gate-source charge q gs --5.8 gate-drain charge q gd -- 11 turn-on delay time t d(on) v dd = 30 v, i d = 17 a, r g = 18 : , r d = 1.7 : , see fig. 10 b -13- ns rise time t r -58- turn-off delay time t d(off) -25- fall time t f -42- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --17 a pulsed diode forward current a i sm --68 body diode voltage v sd t j = 25 c, i s = 17 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 17 a, di/dt = 100 a/ p s - 88 180 ns body diode reverse recovery charge q rr - 0.29 0.64 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
3 irfz24, sihfz24 fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 175 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature www.kersemi.com document number: 91406 www.vishay.com s11-0521-rev. b, 21-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 175 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
4 irfz24, sihfz24 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area www.kersemi.com www.vishay.com document number: 91406 4 s11-0521-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
5 irfz24, sihfz24 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f www.kersemi.com document number: 91406 www.vishay.com s11-0521-rev. b, 21-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f
6 irfz24, sihfz24 fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge wave form fig. 13b - gate charge test a r g i as 0.01 t p d.u.t. l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - www.kersemi.com www.vishay.com document number: 91406 6 s11-0521-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge wave form fig. 13b - gate charge test a r g i as 0.01 t p d.u.t. l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
7 irfz24, sihfz24 fig. 14 - for n-channel p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd www.kersemi.com document number: 91406 www.vishay.com s11-0521-rev. b, 21-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfz24, sihfz24 vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91406 . p.. period d/dt iode recovery dv/dt ripple ody diode forward drop reapplied voltage rever s e recovery current ody diode forward current v s 10 v a s river gate drive ..t. l s waveform ..t. v s waveform nductor current p.. period peak io d e recovery d v/ d t test ircuit v dv/dt controlled by r g river s ame type a s ..t. s controlled by duty factor ..t. device under te s t ..t. ircuit layout con s ideration s ow s tray inductance round plane ow leakage inductance current tran s former r g ote a. v s v for logic level device s v
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